Importance

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Abstract

The method comprises following steps; a collected disk sample (20) is disposed at a position where Bragg reflection from a Miller index plane is detected; the disk sample (20) is rotated in-plane about the center thereof by a rotation angle φ so that an X-ray irradiation region defined by a slit φ-scans the principal plane of the disk sample (20); a chart showing the dependence of intensity of the Bragg reflection on the rotation angle (φ) of the disk sample (20) is determined; the amount of change per a unit rotation angle of diffraction intensity of a baseline of the φ scan chart is determined as a first derivative value; skewness in the normal distribution of the absolute value of the amount of change is calculated; and the skewness is used as an evaluation index of the crystal grain size distribution to select polycrystalline silicon.

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First Claim