Geometrically Enhanced Resistive Random Access Memory (RRAM) Cell And Method Of Forming Same
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
N/A
app pub date -
Dec 23, 2014
filing date -
Dec 23, 2014
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
A memory device (and method of making and using the memory device) includes a first electrode of conductive material, a second electrode of conductive material, and a layer transition metal oxide material that includes first and second elongated portions meeting each other at a sharp corner. Each of the first and second elongated portions is disposed between and in electrical contact with the first and second electrodes.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully