SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Jun 23, 2016
app pub date -
Nov 16, 2015
filing date -
Dec 23, 2014
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
A semiconductor light-emitting device including a first N-type semiconductor layer, a P-type semiconductor layer, and a light-emitting layer is provided. The first N-type semiconductor layer contains aluminum, and the concentration of the N-type dopant thereof is greater than or equal to 5×1018 atoms/cm3. The light-emitting layer is disposed between the first N-type semiconductor layer and the P-type semiconductor layer. A manufacturing method of a semiconductor light-emitting device is also provided.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully