FIELD EFFECT TRANSISTOR WITH SELF-ADJUSTING THRESHOLD VOLTAGE
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United States of America Patent
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app pub date -
Feb 11, 2016
filing date -
Feb 22, 2013
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Abstract
Methods for forming field effect transistors (FETs) with improved ON/OFF current ratios in addition to short charging times and the resulting devices are disclosed. Embodiments include forming a gate oxide layer above a channel region in a substrate, forming a partial self-adjusting threshold voltage layer above a drain-side end of the gate oxide layer, and forming a gate above the partial self-adjusting threshold voltage layer and the gate oxide layer.
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