IGZO Devices with Metallic Contacts and Methods for Forming the Same
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United States of America Patent
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Issued Date -
Jun 23, 2016
app pub date -
Dec 18, 2014
filing date -
Dec 18, 2014
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Abandoned
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Abstract
Embodiments described herein provide indium-gallium-zinc oxide (IGZO) devices, such as IGZO thin-film transistors (TFTs), and methods for forming such devices. A substrate is provided. A gate electrode is formed above the substrate. A gate dielectric layer is formed above the gate electrode. An IGZO channel layer is formed above the gate dielectric layer. The IGZO channel layer includes crystalline IGZO. An electrode is formed above the IGZO channel layer. The electrode comprises titanium, aluminum, and nitrogen.
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