Semiconductor Device Metal-Insulator-Semiconductor Contacts with Interface Layers and Methods for Forming the Same
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United States of America Patent
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Issued Date -
Jun 23, 2016
app pub date -
Dec 19, 2014
filing date -
Dec 19, 2014
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Abandoned
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Abstract
Embodiments provided herein describe systems and methods for forming semiconductor devices. A semiconductor substrate is provided. A source region and a drain region are formed on the semiconductor substrate. A gate electrode is formed between the source region and the drain region. A contact is formed above at least one of the source region and the drain region. The contact includes an insulating layer formed above the semiconductor substrate, an interface layer formed above the insulating layer, and a metallic layer formed above the interface layer. The interface layer is operable as a barrier between a material of the insulating layer and a material of the metallic layer, reduces the electrical resistance between the material of the insulating layer and the material of the metallic layer, or a combination thereof.
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