METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EPITAXIAL WAFER, AND METHOD OF PRODUCING SOLID-STATE IMAGE SENSING DEVICE

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United States of America Patent

APP PUB NO 20160181311A1
SERIAL NO

14442355

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Abstract

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The present invention provides a method of producing a semiconductor epitaxial wafer, which can suppress metal contamination by achieving higher gettering capability.

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Patent Owner(s)

Patent OwnerAddress
SUMCO CORPORATION2-1 SHIBAURA 1-CHOME MINATO-KU TOKYO 105-8634

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kadono, Takeshi Minato-ku, JP 28 68
Kurita, Kazunari Minato-ku, JP 51 271

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