NON-VOLATILE PUSH-PULL NON-VOLATILE MEMORY CELL HAVING REDUCED OPERATION DISTURB AND PROCESS FOR MANUFACTURING SAME
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Feb 11, 2016
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Mar 1, 2013
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Abstract
A non-volatile memory cell includes a p-channel non-volatile transistor having a source and a drain defining a channel and a gate overlying the channel and an n-channel non-volatile transistor having a source and a drain defining a channel and a gate overlying the channel. In at least one of the p-channel non-volatile transistor and the n-channel non-volatile transistor, a lightly-doped drain region extends from the drain into the channel.
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