SELECTIVE NITRIDE ETCH
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United States of America Patent
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Issued Date -
Jun 23, 2016
app pub date -
Dec 18, 2014
filing date -
Dec 18, 2014
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Abstract
Methods of selectively etching silicon nitride are provided. Silicon nitride layers are exposed to a fluorinating gas and nitric oxide (NO), which may be formed by reacting nitrous oxide (N2O) and oxygen (O2) in a plasma. Methods also include defluorinating the substrate prior to turning off the plasma to increase etch selectivity of silicon nitride.
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