SEMICONDUCTOR DEVICE MANUFACTURING METHOD
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United States of America Patent
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Issued Date -
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app pub date -
Feb 26, 2016
filing date -
Oct 4, 2011
priority date (Note) -
Abandoned
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Abstract
A semiconductor device manufacturing method includes forming a dielectric film on a semiconductor substrate; forming a resist pattern on the dielectric film; irradiating an ionized gas cluster to a region of the dielectric film where the resist pattern is not formed; and removing a part of the region of the dielectric film in a thickness direction thereof where the ionized gas cluster is irradiated by a wet etching. The dielectric film serves as a gate insulating film, and two regions having different thicknesses of the dielectric film are formed.
First Claim
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