Particle removal with minimal etching of silicon-germanium
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United States of America Patent
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Issued Date -
Jun 23, 2016
app pub date -
Dec 19, 2014
filing date -
Dec 19, 2014
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Abstract
Particle-clean formulations and methods for semiconductor substrates use aqueous solutions of tetraethylammonium hydroxide (“TEAH,” C8H21NO) with or without hydrogen peroxide (H2O2). The solution pH ranges from 8-12.5. At process temperatures between 20-70 C, the TEAH solutions have been observed to remove particles from silicon-germanium (SiGe) with 20-99% Ge content in 15-300 seconds with very little etching (SiGe etch rates<1 nm/min).
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