DEVICE FOR ION IMPLANTATION
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United States of America Patent
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Mar 2, 2016
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Nov 30, 2010
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Abstract
In an ion implantation device and a method for the ion implantation of a substrate, plasma having an ion density of at least 1010 cm−3, is generated by a plasma source in a discharge space. The discharge space is delimited in the direction of the substrate to be implanted by a plasma-delimiting wall. The plasma-delimiting wall being at a plasma potential, and a pressure in the discharge space is higher than the pressure in the space in which the substrate is situated in the ion implantation device. The substrate bears on a substrate support, with its substrate surface opposite the plasma-delimiting wall. The substrate and/or the substrate support are/is utilized as a substrate electrode, which is put at a high negative potential relative to the plasma that ions are accelerated from the plasma in the direction of the substrate and implanted into the substrate.
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