METHOD AND APPARATUS FOR REDUCING LEAKAGE CURRENT IN MEMORY

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United States of America Patent

APP PUB NO 20160180924A1
SERIAL NO

14580171

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Abstract

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A method and apparatus in which word line drivers associated with memory word lines are selectively powered based on an active memory address reduces current consumption in a memory.

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Patent OwnerAddress
NXP B V F/K/A FREESCALE SEMICONDUCTOR INC5656 AG HIGH TECH CAMPUS 60 EINDHOVEN

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  • 2014 Application Filing Year
  • G11C Class
  • 4103 Applications Filed
  • 3838 Patents Issued To-Date
  • 93.55 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances2014201520162017201820192020202120220255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Rana, Manmohan Ghaziabad, IN 16 89
Singh, Paramjeet Delhi, IN 20 119

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Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges2621581362137774127158742501 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +010020030040050060070080090010001100120013001400150016001700

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