Chemically-sensitive field effect transistor
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United States of America Patent
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Oct 1, 2019
Grant Date -
Jun 23, 2016
app pub date -
Dec 9, 2015
filing date -
Dec 18, 2014
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Abstract
A chemically-sensitive field effect transistor is disclosed herein. The chemically-sensitive field effect transistor comprises a CMOS structure comprising a conductive source and a conductive drain, a channel and an analyte-sensitive dielectric layer. The channel extends from the conductive source to the conductive drain. The channel is composed of a one-dimensional transistor material or a two-dimensional transistor material. The analyte-sensitive dielectric layer is disposed over the channel. An I-V curve or an I-Vg curve is shifted in response to a chemical reaction occurring on or near the chemically-sensitive field effect transistor.
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