Apparatus and Method of Manufacturing Free Standing CVD Polycrystalline Diamond Films

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United States of America Patent

APP PUB NO 20160177441A1
SERIAL NO

14966085

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Abstract

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In a system and method of growing a diamond film, a cooling gas flows between a substrate and a substrate holder of a plasma chamber and a process gas flows into the plasma chamber. In the presence of an plasma in the plasma chamber, a temperature distribution across the top surface of the substrate and/or across a growth surface of the growing diamond film is controlled whereupon, during diamond film growth, the temperature distribution is controlled to have a predetermined temperature difference between a highest temperature and a lowest temperature of the temperature distribution. The as-grown diamond film has a total thickness variation (TTV)<10%, <5%, or <1%; and/or a birefringence between 0 and 100 nm/cm, 0 and 80 nm/cm, 0 and 60 nm/cm, 0 and 40 nm/cm, 0 and 20 nm/cm, 0 and 10 nm/cm, or 0 and 5 nm/cm.

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Patent Owner(s)

Patent OwnerAddress
II-VI DELAWARE INC1105 NORTH MARKET STREET SUITE 1300 WILMINGTON DE 19801

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Liu, Chao Butler, US 386 1525
Sabens, David Harmony, US 8 11
Tanner, Charles D Saxonburg, US 9 35
Xu, Wen-Qing Medfield, US 55 146

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