Laser-Induced Borane Production for Ion Implantation
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United States of America Patent
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app pub date -
Dec 19, 2014
filing date -
Dec 19, 2014
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Abstract
Systems and methods for the production of laser induced high mass molecular borane is disclosed for an ion implantation system. The system comprises a laser, a diborane gas source, a heated interaction chamber for generating a high mass molecular borane, a transport system for transferring the high mass molecular borane, and an ion source chamber for generating an ion beam in an ion beam path for implantation of a workpiece. The transport system comprises at least a first and a second flow control component at least a first heated chamber, wherein the first heated chamber is disposed between the first and second flow control components, and wherein the first heated chamber is configured to condense the high mass molecular borane. The laser comprises a CO2 laser configured to irradiate the diborane source gas at a wavelength of about 10.6 μm at a R-16 (973 cm−1) line of excitation.
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- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
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Patent Owner(s)
Patent Owner | Address | |
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AXCELIS TECHNOLOGIES INC | 108 CHERRY HILL DRIVE BEVERLY MA 01915 |
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Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
DiVergilio, William | Cambridge, US | 8 | 39 |
# of filed Patents : 8 Total Citations : 39 | |||
Lee, William Davis | Newburyport, US | 36 | 140 |
# of filed Patents : 36 Total Citations : 140 | |||
Tieger, Daniel R | Manchester, US | 18 | 158 |
# of filed Patents : 18 Total Citations : 158 |
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