High-voltage semiconductor device and method for manufacturing the same
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United States of America Patent
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Dec 16, 2014
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Dec 16, 2014
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The present disclosure provides a high-voltage semiconductor device, including: a substrate; an epitaxial layer disposed over the substrate and having a first conductive type; a gate structure disposed over the epitaxial layer; a source region and a drain region disposed in the epitaxial layer at opposite sides of the gate structure respectively; and a stack structure disposed between the gate structure and the drain region, wherein the stack structure includes: a blocking layer; an insulating layer disposed over the blocking layer; and a conductive layer disposed over the insulating layer and electrically connected the source region or the gate structure. The present disclosure also provides a method for manufacturing the high-voltage semiconductor device.
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