SELECTIVE SEALANT REMOVAL
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United States of America Patent
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Issued Date -
Jun 16, 2016
app pub date -
Dec 12, 2014
filing date -
Dec 12, 2014
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A method of forming features in a low-k dielectric layer is described. A via, trench or a dual damascene structure may be present in the low-k dielectric layer prior to depositing a conformal hermetic layer. The conformal hermetic layer is configured to keep water and contaminants out. Some of the same conformal hermetic layer may deposit on the underlying copper. The portion of the conformal hermetic layer on the underlying copper is preferentially removed but the beneficial portion on the low-k dielectric layer remains. The selective removal of the conformal hermetic layer may be accomplished using a dry etch or a wet etch using a weak organic acid.
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