RESISTIVE MEMORY DEVICES

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United States of America Patent

APP PUB NO 20160163979A1
SERIAL NO

14955096

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Abstract

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A resistive memory device includes: a first electrode; a variable resistive material layer that is formed on the first electrode and includes a metal oxide NxMOy (wherein 0.001

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTD129 SAMSUNG-RO YEONGTONG-GU SUWON-SI GYEONGGI-DO 16677

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
BAEK, IN-GYU CHEONAN-SI, KR 68 2219
HWANG, HYUN-SANG CHEONAN-SI, KR 27 288
LEE, SEUNG-RYUL ASAN-SI, KR 22 222
MISHA, SAIFUL-HAQUE ASAN-SI, KR 1 4

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