NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME
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Jun 9, 2016
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Jun 16, 2014
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Jul 23, 2013
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To realize a nitride semiconductor light-emitting element having excellent lifespan characteristics in addition to improved light emission efficiency compared with conventional elements. A nitride semiconductor light-emitting element having a light-emitting layer obtained by alternately stacking a well layer comprising a nitride semiconductor and a barrier layer comprising a nitride semiconductor between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer, wherein a final barrier layer, which is the barrier layer formed at a position in contact with the p-type nitride semiconductor layer, contains n-type impurities, and the concentration of n-type impurities at the interface with the p-type nitride semiconductor layer is 4×1017/cm3 or less.
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