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United States of America Patent

APP PUB NO 20160163869A1
SERIAL NO

14959163

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Change in electric characteristics of a semiconductor device including a transistor having a crystalline oxide semiconductor is suppressed, and reliability thereof is improved. Furthermore, a semiconductor device with low power consumption is provided. The transistor includes a gate electrode, a gate insulator, and an oxide semiconductor including a crystal. The oxide semiconductor includes hydrogen or hydroxy group. The number of released gas molecules observed as water molecules with a thermal desorption spectrometer is 1.0/nm3 or less.

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Patent Owner(s)

Patent OwnerAddress
SEMICONDUCTOR ENERGY LABORATORY CO LTDKANAGAWA KANAGAWA

International Classification(s)

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  • 2015 Application Filing Year
  • H01L Class
  • 25498 Applications Filed
  • 22451 Patents Issued To-Date
  • 88.06 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances20152016201720182019202020212022202320240255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
NAKASHIMA, Motoki Atsugi, JP 65 413
YAMAZAKI, Shunpei Tokyo, JP 7526 239327

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  • H01L Class
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Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges1792827316886303131891006776342711301 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +050010001500200025003000350040004500500055006000650070007500800085009000

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