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United States of America Patent
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Issued Date -
Jun 9, 2016
app pub date -
Dec 4, 2015
filing date -
Dec 4, 2015
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Abstract
Change in electric characteristics of a semiconductor device including a transistor having a crystalline oxide semiconductor is suppressed, and reliability thereof is improved. Furthermore, a semiconductor device with low power consumption is provided. The transistor includes a gate electrode, a gate insulator, and an oxide semiconductor including a crystal. The oxide semiconductor includes hydrogen or hydroxy group. The number of released gas molecules observed as water molecules with a thermal desorption spectrometer is 1.0/nm3 or less.
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