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United States of America Patent

APP PUB NO 20160163869A1
SERIAL NO

14959163

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Abstract

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Change in electric characteristics of a semiconductor device including a transistor having a crystalline oxide semiconductor is suppressed, and reliability thereof is improved. Furthermore, a semiconductor device with low power consumption is provided. The transistor includes a gate electrode, a gate insulator, and an oxide semiconductor including a crystal. The oxide semiconductor includes hydrogen or hydroxy group. The number of released gas molecules observed as water molecules with a thermal desorption spectrometer is 1.0/nm3 or less.

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Patent Owner(s)

Patent OwnerAddress
SEMICONDUCTOR ENERGY LABORATORY CO LTDJAPAN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
NAKASHIMA, Motoki Atsugi, JP 65 413
YAMAZAKI, Shunpei Tokyo, JP 7534 239327

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