Integrated Circuit Comprising Group III-N Transistors Monolithically Integrated on a Silicon Substrate and a Method for Manufacturing Thereof
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United States of America Patent
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Jun 9, 2016
app pub date -
Dec 9, 2015
filing date -
Dec 9, 2015
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Abstract
An integrated circuit comprising a first III-N transistor having a source region and a second III-N transistor having a source region, both transistors being monolithically integrated on a common silicon substrate of a first doping type and separated from each-other by an isolation region, the substrate comprising underneath the first transistor a well of a first doping type electrically connected to the source region of the first transistor and comprising underneath the second transistor a well of a second doping type electrically connected to the source region of the second transistor, thereby forming a junction diode in the substrate between the sources of the first and the second transistor.
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