NON-VOLATILE MEMORY AND FABRICATING METHOD THEREOF
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Jun 9, 2016
app pub date -
Feb 13, 2015
filing date -
Dec 5, 2014
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A non-volatile memory including a substrate, a first stacked structure, a second stacked structure, a fifth conductive layer, a first doped region, and a second doped region is provided. The first stacked structure includes a first conductive layer and a second conductive layer stacked on the substrate in order and isolated from each other. The second stacked structure is separately disposed from the first stacked structure and includes a third conductive layer and a fourth conductive layer stacked on the substrate in order and connected to each other. The fifth conductive layer is disposed on the substrate at one side of the first stacked structure away from the second stacked structure. The first doped region is disposed in the substrate below the fifth conductive layer. The second doped region is disposed in the substrate at one side of the second stacked structure away from the first stacked structure.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully