TANTALUM OXIDE FILM REMOVAL METHOD AND APPARATUS

Number of patents in Portfolio can not be more than 2000

United States of America Patent

APP PUB NO 20160163533A1
SERIAL NO

14900566

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

In a tantalum oxide film removal method and apparatus, a silicon substrate having a tantalum oxide film is supported on a spin chuck. A mixed aqueous solution including hydrofluoric acid and organic acid is supplied to the silicon substrate while rotating the silicon substrate together with the spin chuck. The mixed aqueous solution comes into contact with the tantalum oxide film existing on the silicon substrate to remove the tantalum oxide film by the chemical reaction therebetween.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
TOKYO ELECTRON LIMITEDTOKYO

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
DOBASHI, Kazuya Yamanashi, JP 42 1046
HAGIWARA, Akihito Yamanashi, JP 2 11

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation