SILICON SINGLE CRYSTAL INGOT AND WAFER FOR SEMICONDUCTOR
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United States of America Patent
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Jun 9, 2016
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Jan 23, 2014
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May 21, 2013
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A silicon single crystal ingot and a wafer for a semiconductor in one embodiment include a transition region which dominantly has a crystalline defect having a size of 10 nm to 30 nm among the crystalline defects included in an interstitial dominant defect-free region. The difference between the initial oxygen concentration before performing at least one heat treatment to the ingot and the wafer and the final oxygen concentration after performing at least one heat treatment is 0.5 ppma or less.
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