CURRENT BLOCK LAYER STRUCTURE OF LIGHT EMITTING DIODE
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Jun 2, 2016
app pub date -
Dec 1, 2014
filing date -
Dec 1, 2014
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A current block layer structure applied to a light emitting diode is provided. The LED includes a reflecting layer, an N-type electrode, an N-type semiconductor layer, a light emitting layer, a P-type semiconductor layer, a transparent conductive layer and a P-type electrode. A current block reflecting layer is disposed the transparent conductive layer at a region corresponding to the P-type electrode and an end close to the light emitting layer. The current block reflecting layer includes a Bragg reflector (DBR) structure, which allows the current block reflecting layer to reflect an excited light from the light emitting layer. Thus, the excited light emitted towards the P-type electrode is provided with a higher reflection rate and is again reflected by the reflecting layer. The excited light takes exit via regions without the N-type electrode and the P-type electrode after several reflections, thereby enhancing light extraction efficiency of the LED.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully