CRYSTALLINE SILICON SOLAR CELL AND METHOD FOR PRODUCING SAME

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United States of America Patent

APP PUB NO 20160155868A1
SERIAL NO

14906438

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Abstract

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The present invention aims to provide a high performance crystalline silicon solar cell. The present invention is a crystalline silicon solar cell including a first conductivity-type crystalline silicon substrate; an impurity diffusion layer formed on at least a portion of at least one surface of the crystalline silicon substrate; a buffer layer formed on at least a portion of a surface of the impurity diffusion layer; and an electrode formed on a surface of the buffer layer, wherein the electrode includes a conductive metal and a complex oxide, and the buffer layer is a layer comprising silicon, oxygen, and nitrogen.

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Patent Owner(s)

Patent OwnerAddress
NAMICS CORPORATIONNIIGATA-SHI NIIGATA 950-3131

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
SAITO, Genki Niigata-shi, Niigata, JP 5 6
TAKAHASHI, Tetsu Niigata-shi, Niigata, JP 26 163

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