THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME, AND DISPLAY UNIT AND ELECTRONIC APPARATUS
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Jun 2, 2016
app pub date -
Jun 23, 2015
filing date -
Nov 28, 2014
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
Provided is a thin film transistor, including: a gate electrode; a gate insulating film covering the gate electrode; an oxide semiconductor layer provided on the gate insulating film; a source electrode and a drain electrode provided in a spaced, side-by-side relationship, in which the source electrode and the drain electrode each are connected to the oxide semiconductor layer; a first protective film covering the source electrode and the drain electrode, filling a gap between the source electrode and the drain electrode, and configured of a material including a silicon (Si) compound; a second protective film covering the first protective film and configured of a material including a metal compound; and a metal layer covering a region, over the second protective film, superposed on the gap between the source electrode and the drain electrode.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully