SEMICONDUCTOR DEVICE

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United States of America Patent

APP PUB NO 20160155835A1
SERIAL NO

15018675

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A semiconductor device includes a semiconductor layer, an insulating film of silicon nitride or silicon oxynitride on the semiconductor layer, source and drain electrodes formed in openings of the insulating film and in contact with the semiconductor layer, and a gate electrode formed in an opening in the insulating film that is located between the source electrode and the drain electrode and formed in contact with the semiconductor layer. The insulating film has an Si content that is uniform in a direction of thickness of the insulating film, an upper region, and a lower region. The upper region can have an oxygen or a nitrogen concentration that is greater than that of the lower region. The upper region can be formed by exposing the surface of the insulating film to ozone, an oxygen plasma or a nitrogen plasma.

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Patent Owner(s)

Patent OwnerAddress
SUMITOMO ELECTRIC DEVICE INNOVATIONS INC1 KANAI-CHO SAKAE-KU YOKOHAMA-SHI KANAGAWA 244-0845

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
KOMATANI, Tsutomu Yokohama-shi, JP 23 206

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