SUBSTRATE PROCESSING APPARATUS, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM

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United States of America Patent

SERIAL NO

15007513

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Abstract

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A method for manufacturing a semiconductor device includes: supplying a remover to a substrate including a Si-containing film on which a denatured layer is formed in order to remove the denatured layer; supplying a processing gas containing two or more halogen elements to the substrate in order to remove the Si-containing film; and supplying the remover to the substrate after the act of removing the Si-containing film in order to remove a residue of the denatured layer left after the act of removing the Si-containing film.

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Patent Owner(s)

Patent OwnerAddress
HITACHI KOKUSAI ELECTRIC INCTOKYO 105-8039

International Classification(s)

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  • 2016 Application Filing Year
  • H01L Class
  • 27971 Applications Filed
  • 23507 Patents Issued To-Date
  • 84.05 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances20162017201820192020202120222023202420250255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
HIYAMA, Shin Toyama-shi, JP 25 508
KAMEDA, Kenji Toyama-shi, JP 46 769
TSUBOTA, Yasutoshi Toyama-shi, JP 30 54
WADA, Yuichi Toyama-shi, JP 76 1105

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Patent Citation Ranking

  • 3 Citation Count
  • H01L Class
  • 13.47 % this patent is cited more than
  • 9 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges1792827316886303131891006776342711301 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +050010001500200025003000350040004500500055006000650070007500800085009000

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