METHOD FOR EXTRACTING TRAP TIME CONSTANT OF GATE DIELECTRIC LAYER IN SEMICONDUCTOR DEVICE
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Jan 8, 2014
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Aug 21, 2013
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Abstract
The present invention discloses a method for extracting a trap time constant of a gate dielectric layer in a semiconductor device, which is related to the reliability of microelectronic devices. The method comprises initializing a state of a trap in the semiconductor device so that the trap finally comes to an empty state; applying a DC or
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