Epitaxial Structure and Growth Method of Group-III Nitrides
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Feb 4, 2016
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Aug 7, 2013
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A Group-III nitrides epitaxial structure includes a Si substrate, and a Group-III nitrides layer disposed over the Si substrate, wherein an interface structure of “coexistence of Al atoms and SixNy” between the Si substrate and the Group-III nitrides. Al atoms are configured to be absorbed to the Si substrate and connect the Group-III nitrides; and SixNy are configured to release mismatch stress caused by heteroepitaxy. A fabricating method comprises: (1) providing a Si substrate; (2) forming an interface structure over a surface of the Si substrate , wherein the interface structure is arranged with both Al atoms and SixNy, which are then cladded by an AlN epitaxial layer; and (3) growing Group-III nitrides over the interface structure wherein the Al atoms are configured to be absorbed to the Si substrate and connect the Group-III nitrides and the SixNy is configured to release mismatch stress generated by heteroepitaxy.
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