LIGHT-RECEIVING ELEMENT AND PRODUCTION METHOD THEREFOR
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United States of America Patent
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Issued Date -
May 26, 2016
app pub date -
Apr 23, 2014
filing date -
Jun 26, 2013
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Abandoned
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Abstract
A light-receiving element includes a semiconductor layer with a pn junction part and a pair of electrodes that interpose the pn junction part. Near field light is generated in the vicinity of the pn junction part by applying a forward bias voltage between the pair of electrodes and irradiating the pn junction with light that has a specific wavelength, and an electrode of the irradiated pair of electrodes is configured with a wire grid polarizer that transmits the light that has the specific wavelength.
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