Importance

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Abstract

A semiconductor device includes at least two transistor cells. Each of these at least two transistor cells includes: a drain region, a drift region, and a body region in a semiconductor fin of a semiconductor body; a source region adjoining the body region; a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric; and a field electrode dielectrically insulated from the drift region by a field electrode dielectric, and connected to the source region. The field electrode dielectric is arranged in a first trench between the semiconductor fin and the field electrode. The at least two transistor cells include a first transistor cell, and a second transistor cell. The semiconductor fin of the first transistor cell is separated from the semiconductor fin of the second transistor cell by a second trench different from the first trench.

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First Claim