SEMICONDUCTOR WAFER AND METHOD OF PRODUCING SEMICONDUCTOR WAFER

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United States of America Patent

SERIAL NO

15008974

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Abstract

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A semiconductor wafer includes first and second superlattice layers. The first superlattice layer includes first unit layers each of which includes first and second layers, the second superlattice layer includes second unit layers each of which includes third and fourth layers, the first layer is made of Alx1Ga1-x1N (0y1Ga1-y1N (0≦y1<1, x1>y1), the third layer is made of Alx2Ga1-x2N (0y2Ga1-y2N (0≦y2<1, x2>y2), an average lattice constant of the first superlattice layer is different from that of the second superlattice layer, and one or more layers selected from the first and second superlattice layers contain impurity atoms that improve a breakdown voltage and that have a concentration higher than 7×1018 [atoms/cm3].

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Patent Owner(s)

Patent OwnerAddress
SUMITOMO CHEMICAL COMPANY LIMITED2-7-1 NIHONBASHI CHUO-KU TOKYO 103-6020

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
SAZAWA, Hiroyuki Tsukuba-shi, JP 15 202

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