GAS INJECTION METHOD FOR UNIFORMLY PROCESSING A SEMICONDUCTOR SUBSTRATE IN A SEMICONDUCTOR SUBSTRATE PROCESSING APPARATUS
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United States of America Patent
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Issued Date -
May 26, 2016
app pub date -
Nov 25, 2014
filing date -
Nov 25, 2014
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Abandoned
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Abstract
A method of uniformly processing an upper surface of a semiconductor substrate in a plasma processing apparatus including a showerhead including gas outlets in discrete sectors of a process exposed surface thereof comprises processing the upper surface of the semiconductor substrate by flowing gas through a first discrete sector of the showerhead while preventing gas from flowing through an adjacent discrete sector of the showerhead, and processing the upper surface of the semiconductor substrate by flowing gas through a second discrete sector of the showerhead while preventing gas from flowing through an adjacent discrete sector of the showerhead. The flow of gas through the first discrete sector and the second discrete sector of the showerhead is time averaged such that the upper surface of the semiconductor substrate is uniformly processed.
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