Polycrystalline semiconductor nanostructured material

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United States of America Patent

PATENT NO 10692718
APP PUB NO 20160148807A1
SERIAL NO

14950639

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Abstract

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A method for producing a network of nanostructures from at least one semiconductor material, including a step of forming nanostructures on the surface of a substrate, at least a part of the nanostructures having areas of contact between each other, comprising, in sequence and after the step of forming: a step of deoxidising the surface of the nanostructures and a step of reinforcing the bond between the nanostructures at the contact areas.

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Patent Owner(s)

Patent OwnerAddress
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESPARIS FRANCE PARIS PARIS
INSTITUT POLYTECHNIQUE DE GRENOBLE46 AVENUE FÉLIX VIALLET GRENOBLE 38000
CNRS CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE75016 PARIS

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Baron, Thierry Saint Egreve, FR 26 178
Serre, Pauline Sassenage, FR 1 0
Ternon, Celine Saint Martin le Vinoux, FR 1 0

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