METHOD FOR PRODUCING A THIN FILM TRANSISTOR

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United States of America Patent

APP PUB NO 20160148804A1
SERIAL NO

14561884

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Abstract

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A method for producing a thin film transistor includes forming a transistor prototype on a substrate, with the transistor prototype including a face having a to-be-treated portion. The to-be-treated portion of the transistor prototype is exposed in an environment full of a supercritical fluid. The supercritical fluid conducts a surface treatment on the to-be-treated portion of the transistor prototype to form a thin film transistor. The method can solve the problem of too many defects of the thin film transistor resulting from a low-temperature process.

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Patent Owner(s)

Patent OwnerAddress
NATIONAL SUN YAT-SEN UNIVERSITYNO 70 LIEN-HAI RD GUSHAN DISTRICT KAOHSIUNG CITY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Ting-Chang Kaohsiung, TW 114 1292
Chen, Hua-Mao Kaohsiung, TW 12 5
Hsieh, Tian-Yu Kaohsiung, TW 3 1
Tsai, Ming-Yen Kaohsiung, TW 21 60

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