Plasma etching apparatus
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United States of America Patent
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Apr 14, 2020
Grant Date -
May 26, 2016
app pub date -
Nov 24, 2015
filing date -
Nov 25, 2014
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Abstract
A plasma etching apparatus is for etching a substrate and includes at least one chamber, a substrate support positioned within the at least one chamber, and a plasma production device for producing a plasma for use in etching the substrate. The plasma production device comprises an electrically conductive coil which is positioned within the at least one chamber, and the coil is formed from a metallic material which can be sputtered onto an interior surface of the at least one chamber.
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