PARALLEL FORMING OF MEMORY CELLS

Number of patents in Portfolio can not be more than 2000

United States of America Patent

APP PUB NO 20160148681A1
SERIAL NO

14548539

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

A method of parallel forming of memory cells, and an apparatus including a memory and a multiplexer. The memory has an array of memory cells and bit lines, wherein each of the bit lines is associated with a plurality of the memory cells. The multiplexer has a plurality of outputs coupled to a plurality of the respective bit lines. The multiplexer is configured to select in parallel a plurality of the bit lines by applying a forming bias voltage, detect formation of one or more memory cells associated with the selected bit lines, and disconnect from the forming bias voltage any formed memory cells.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
INFINEON TECHNOLOGIES AG85579 NEUBIBERG

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bukethal, Christoph Dresden, DE 5 51

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation