GARNET SINGLE CRYSTAL AND METHOD FOR PRODUCING THE SAME

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United States of America Patent

APP PUB NO 20160145765A1
SERIAL NO

14787954

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Abstract

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[Object] To provide a high-quality, transparent garnet single crystal with suppressed cell growth that would otherwise lead to partially inhomogeneous crystal composition, and a method for producing the garnet single crystal. [Solving means] The garnet single crystal is grown by bringing a seed crystal into contact with a raw-material melt in a crucible disposed inside a chamber and pulling, while rotating, the seed crystal. The garnet single crystal is characterized by being represented by a general formula: (Tb3-xScx) (Sc2-yAly)Al3O12-z (provided that 0.11≦x≦0.14, and 0.17≦y≦0.23). The garnet single crystal is grown as follows. First, a mixture powder containing 20.9 to 21.2% by mole terbium oxide, 32.7 to 33.3% by mole scandium oxide, and the balance of aluminium oxide and unavoidable impurities is filled into the crucible and melted. Then, while a nitrogen gas is supplied into the chamber, the number of rotations of the seed crystal is set to 5 to 20 rpm, and the rate of pulling the seed crystal is set to 0.3 to 0.8 mm/h for the growth.

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Patent Owner(s)

Patent OwnerAddress
SUMITOMO METAL MINING CO LTD11-3 SHIMBASHI 5-CHOME MINATO-KU TOKYO 105-8716

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
ISHIDA, Fumiaki Ome-shi, JP 9 105
MATSUI, Masayoshi Ome-shi, JP 19 138
TATSUMIYA, Kazuki Ome-shi, JP 1 5

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