METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE
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United States of America Patent
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Issued Date -
May 19, 2016
app pub date -
Oct 28, 2015
filing date -
Nov 18, 2014
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Abstract
A method for manufacturing a light emitting device is provided. Step (a): A semiconductor wafer having a substrate and at least one epitaxial structure is provided. Step (b): An electrode connection layer is formed on the epitaxial structure, wherein the electrode connection layer includes connection pads, first electrodes and second electrodes. Step (c): A package substrate having the similar size as that of the semiconductor wafer and having conductive through holes is provided. Step (d): The semiconductor wafer and the package substrate are bonded by aligning the connection pads with the conductive through holes, so that the conductive through holes are electrically connected to a first type semiconductor layer or a second type semiconductor layer of the epitaxial structure. Step (e): The substrate is removed so as to expose a surface of the epitaxial structure and form a light emitting device.
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