Ga2O3 SEMICONDUCTOR ELEMENT
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United States of America Patent
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May 19, 2016
app pub date -
Apr 25, 2014
filing date -
Jun 17, 2013
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Abstract
Provided is a Ga2O3-based semiconductor element having less leak current and a large on/off ratio. In one embodiment, provided is a Ga2O3-based MISFET having a β-Ga2O3 single crystal layer formed on a high-resistance β-Ga2O3 substrate, a source electrode and drain electrode formed on the β-Ga2O3 single crystal layer, a gate electrode formed between the source electrode and drain electrode on the β-Ga2O3 single crystal layer, and an insulating film that has an oxide insulator as the primary component and that covers the surface of the β-Ga2O3 single crystal layer at the region between the drain electrode and the gate electrode and the region between the gate electrode and the source electrode.
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