PIXEL ISOLATION REGIONS FORMED WITH DOPED EPITAXIAL LAYER
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United States of America Patent
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Issued Date -
May 19, 2016
app pub date -
Nov 17, 2014
filing date -
Nov 17, 2014
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Abstract
An image sensor may include isolation regions that are formed in between photodiodes. These isolation regions may prevent cross-talk and improve the performance of the image sensor. The isolation regions may be made of epitaxial silicon. The epitaxial silicon may be grown in trenches formed in a substrate using an etching process. Portions of the substrate may be protected from the etching process with a hard mask layer. Photodiodes may later be implanted in these protected portions of the substrate after the isolation regions have been formed. The epitaxial silicon may be boron-doped or antimony-doped epitaxial silicon with a concentration of boron or antimony between 1016 cm3 and 1018 cm3.
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