Modeling Photoresist Shrinkage Effects In Lithography
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United States of America Patent
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Jan 25, 2016
filing date -
Sep 22, 2014
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Abstract
Aspects of the disclosed techniques relate to techniques for resist simulation in lithography. Local light power values are determined for a plurality of sample points in boundary regions of an aerial image of a feature to be printed on a resist coating, wherein each of the local light power values represents a light power value for an area surrounding one of the plurality of sample points. Based on the local light power values, a vertical shrinkage function is constructed. Resist contour data of the feature are then computed based at least on resist shrinkage effects modeled using the local light power values and the vertical shrinkage function.
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