REACTIVE ULTRAVIOLET THERMAL PROCESSING OF LOW DIELECTRIC CONSTANT MATERIALS
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United States of America Patent
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Issued Date -
May 19, 2016
app pub date -
Nov 18, 2014
filing date -
Nov 18, 2014
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Abandoned
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Abstract
Various embodiments herein relate to methods and apparatus for preparing a low-k dielectric material on a semiconductor substrate. The dielectric material may include porogens distributed throughout a structural matrix. A reactive ultraviolet thermal processing operation is performed to promote removal of the porogens from the dielectric material. By flowing a weak oxidizer such as carbon dioxide into the reaction chamber during UV exposure, the rate at which the porogens are removed can be enhanced in a controllable manner.
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