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Abstract

Provided are superconducting circuits and methods of forming such circuits. A circuit may include a silicon containing low loss dielectric (LLD) layer formed by fluorine passivation of dangling bonds of silicon atoms in the layer. The LLD layer may be formed from silicon nitride or silicon oxide. For uniform passivation (e.g., uniform distribution of fluorine within the LLD layer), fluorine may be introduced while forming the LLD layer. For example, a fluorine containing precursor may be supplied into a deposition chamber together with a silicon containing precursor. Alternatively, the LLD layer may be formed as a stack of many thin sublayers, and each sublayer may be subjected to individual fluorine passivation. For example, low power plasma treatment or annealing in a fluorine containing environment may be used for this purpose. The concentration of fluorine in the LLD layer may be between about 0.5% atomic and 5% atomic.

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First Claim