HIGH ELECTRON MOBILITY TRANSISTOR AND MANUFACTURING METHOD THEREOF

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United States of America Patent

APP PUB NO 20160133738A1
SERIAL NO

14597012

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Abstract

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A high electron mobility transistor is realized in the present invention by a gate recessed structure, a high permittivity oxide layer and a nitride-based interfacial passivation layer, featuring high threshold voltage, high transconductance, highly stable drain output current, and high reliability.

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Patent OwnerAddress
NATIONAL CHIAO TUNG UNIVERSITYNO 1001 DASYUE RD HSINCHU CITY 300

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHANG, Edward Yi Hsinchu County, TW 53 278
HSIEH, Ting-En Tainan City, TW 7 21
LIN, Yueh-Chin New Taipei City, TW 22 46

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