METHOD OF FABRICATING SOURCE/DRAIN REGION AND SEMICONDUCTOR STRUCTURE HAVING SOURCE/DRAIN REGION FABRICATED BY THE SAME
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United States of America Patent
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Issued Date -
May 12, 2016
app pub date -
Nov 6, 2014
filing date -
Nov 6, 2014
priority date (Note) -
Abandoned
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Abstract
A method of fabricating source/drain region in a substrate includes the steps of: introducing an ion beam-line of a first material to a surface of the substrate at a first energy and a first dosage to implant the substrate with dopants of a first conductive type; and subsequently, introducing a plasma of a second material to the surface. The ion beam-line is introduced, at a second energy and a second dosage to implant the substrate with dopants of the first conductive type. The second dosage is greater than the first dosage and the implant depth of the plasma is less than the implant depth of the ion beam-line.
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