GUARD RING FOR MEMORY ARRAY
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United States of America Patent
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Issued Date -
May 12, 2016
app pub date -
Jan 18, 2016
filing date -
Sep 20, 2013
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A device and a method for forming a device are presented. The method includes providing a substrate having an array region in which memory cells are to be formed. Storage gates of the memory cells are formed in the array region. A guard ring surrounding the array region is formed. A gate electrode layer is formed on the substrate. The gate electrode layer fills gaps between the storage gates and guard ring. The gate electrode layer is planarized to produce a planar surface between the gate electrode layer, storage gates and guard ring. The guard ring maintains thickness of the gate electrode layer in the array region such that thickness of the storage gates across center and edge regions of the array region is uniform.
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